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Samsung Electronics Accelerates Research and Development of Next-Generation High-Bandwidth Memory, First Batch of HBM4E to Be Produced in May
Samsung Electronics is fully advancing the R&D process of its next-generation high-bandwidth memory (HBM) products, striving to further consolidate its advantages in the high-end artificial intelligence memory market. According to reports, Samsung plans to produce the first batch of HBM4E samples that meet NVIDIA standards as early as May 2026. Insiders in the industry say Samsung has a clear and tight timeline. Its target is to have its foundry division successfully produce samples of the HBM4E core logic chips before mid-next month.
#Gate广场四月发帖挑战. $ETH