Samsung to Deploy 2nm Process for HBM5 AI Memory, 50% Faster Than HBM4E

According to Chosun Daily, on July 27 Samsung Electronics announced plans to use its 2-nanometer process for the base die of its eighth-generation high-bandwidth memory (HBM5). The company said HBM5 will process data more than 50% faster than current HBM4E chips, utilizing a 2nm Gate-All-Around base die and improved through-silicon vias (TSVs) to enhance speed and power efficiency.
Disclaimer: The information on this page may come from third-party sources and is for reference only. It does not represent the views or opinions of Gate and does not constitute any financial, investment, or legal advice. Virtual asset trading involves high risk. Please do not rely solely on the information on this page when making decisions. For details, see the Disclaimer.
Comment
0/400
No comments